https://doi.org/10.15407/spqeo6.02.121
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 2. P. 121-128.
PACS: 78.55. - m; 78.55. Et
Analysis of luminescence
method applicability for determination of Cd1-xZnxTe
composition
K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk
Lashkaryov Institute of Semiconductor Physics,
NAS of Ukraine, 45 prospect Nauki, 03028 Kyiv, Ukraine.
E-mail: strilchuk@isp.kiev.ua.
Abstract. Physical fundamentals are analyzed for the method of determination of Cd1-xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.
Keywords: Cd1-xZnxTe
composition, excitons, exciton-impurity complexes, luminescence.
Paper received 31.03.03; accepted for publication
16.06.03.
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