https://doi.org/10.15407/spqeo7.02.129
PACS: 68.55Ac; 81.15.-z; 73.61.Ga; 78.66.Hf
Properties of CdTe thin films prepared by hot wall epitaxy
Ye.O. Bilevych1, A.I. Boka1, L.O. Darchuk1, J.V. Gumenjuk-Sichevska1,
F.F. Sizov1, O. Boelling2 and B. Sulkio-Cleff2
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
2Institut fur Kernphysik, Germany
Abstract. CdTe thin films were grown on different substrates: BaF2 (111), polished Si (100), SiO2, bulk CdTe (110) and HgxCd1–xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well.
Keywords: CdTe, hot wall epitaxy, thin film.
Paper received 24.12.03; accepted for publication 17.06.04.
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