https://doi.org/10.15407/spqeo7.02.154
PACS:
Passivation of silicon surface by ultrathin dielectric film
in M/Si/nematic/ITO structures
M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn*
Chernigov Pedagogical University, 53, G.Polubotka str., 14038 Chernigov, Ukraine
*V. Lashkaryov Institute of Semiconductor Physics, prospect Nauky 45, 03028 Kyiv, Ukraine
E-mail: kucheev@cn.relc.com
Abstract. In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several 
xcm) n-type conductivity silicon sample is presented. It is shown that when the DC voltage with polarity +U on silicon is applied to the structure a passivation effect of silicon surface takes place. It is found that a silicon surface passivated by dielectric film changes an initial alignment of liquid crystal 5CB. In the structure with passivating silicon surface a frequency range of structure photosensitivity extends due to limitation of current leakage through Si/liquid crystal interface.
Keywords: nematic, silicon, passivation, alignment, photosensitivity, light modulator.
Paper received 00.00.00; accepted for publication 17.06.04.
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