|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 041-044.
Revealing the hopping mechanism of conduction
in heavily doped silicon diodes
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone/Fax: +38 (044) 525 7463
Abstract. Measurements of temperature dependences of excess tunnel current in heavily
doped silicon p-n junction diodes at fixed values of the forward bias are carried out in
liquid helium temperature region. In some voltage interval, these dependences are
described well by the Mott law for variable range hopping conductivity. The
interpretation of these results considers a p-n junction from a nontraditional point of
view, namely, as heavily doped and highly compensated semiconductor.
Keywords: junction diode, temperature sensor, silicon, heavy doping, high
compensation, hopping conductivity.
| ||