References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 8 (2) P. 041-044 (2005).

References

1. Yu.M. Shwarts, V.L. Borblik, N. R. Kulish, V.N. Sokolov, M.M. Shwarts, and E.F. Venger, Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region // Sensors and Actuators, 76(1-3), p. 107-111 (1999). https://doi.org/10.1016/S0924-4247(98)00361-6

2. J.A. Del Alamo and R.N. Swanson, Forward-bias tunneling: a limitation to bipolar device scaling // IEEE Electron Device Letters, EDL-7(11), p. 629- 631 (1986). https://doi.org/10.1109/EDL.1986.26499

3. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, New York - Chichester - Brisbane - Toronto - Singapore (1981).

4. V.V. Yevstropov, Yu.V. Zhylyayev, M. Jumayeva, and N. Nazarov, Tunnel-excess current in nondegenerated barrier p-n and m-n structures AIII BV on Si // Fiz. Tekh. Poluprov. 31(2), pp. 152-158 (1997). https://doi.org/10.1134/1.1187092

5. N.F. Mott and E.A. Davis, Electron Processes in Non-crystalline Materials, 2nd ed., Clarendon Press, Oxford (1979).

6. B.I. Shklovskii and A.L. Efros, Electron Properties of Doped Semiconductors, Springer, Berlin (1984). https://doi.org/10.1007/978-3-662-02403-4

7. B.I. Shklovskii, Hopping conduction of heavily doped semiconductors // Sov. Phys.-Semicond., 7(1), p. 77-83 (1973) [Fiz. Tekh. Poluprov. 7(1), p. 112- 118 (1973)].

8. M. Finetti, A.M. Mazzone, L. Passari, B. Ricco, and E. Susi, Temperature dependent conductivity of closely compensated phosphorus-doped silicon // Phil. Mag, 35(5), p. 1141-1151, (1977). https://doi.org/10.1080/14786437708232940