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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 045-050.
Active region of CdTe X-/γ-ray detector with Schottky diode
Chernivtsi National University
2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine
E-mail: lakos@chv.ukrpack.net
Abstract. It has been shown from the Poisson equation that the presence of deep levels in the
semiconductor bandgap influences in a complicated manner upon distribution of the space
charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however,
the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe,
it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of
the high electric field is only a small part of the substrate thickness. Too small capacitance
value and its weak dependence on the bias voltage observed in the Schottky diode made of
semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space
charge region in the diode.
Keywords: Cz-Si, hydrogen, helium, implantation, diffusion, high pressure, treatment.
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