Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 045-050.
https://doi.org/10.15407/spqeo8.02.045


Active region of CdTe X-/γ-ray detector with Schottky diode
L.A. Kosyachenko, O.L. Maslyanchuk

Chernivtsi National University 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine E-mail: lakos@chv.ukrpack.net

Abstract. It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode.

Keywords: Cz-Si, hydrogen, helium, implantation, diffusion, high pressure, treatment.

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