Semiconductor Physics, Quantum Electronics and Optoelectronics, 8 (2) P. 045-050 (2005).


References

1. E.N. Arkad'eva, O.A. Matveev, S.M. Ryvkin, Yu.V. Rud' // Sov. Phys.-Tech. Phys. 36, p. 1146 (1966).
2. E.N. Arkad'eva, O.A. Matveev, S.M. Ryvkin, Yu.V. Rud' // Sov. Phys. Semicond. 1, p. 805 (1967).
3. A. Khusainov, R. Arit, P. Siffert // Nucl. Instr. and Meth. A380, p.245 (1996).
4. M.R. Squillante, G. Entine, E. Frederick, L. Cirignano, T. Hazlett // Ibid. A283, p. 323 (1989).
https://doi.org/10.1016/0168-9002(89)91379-X
5. T. Takahashi, K. Hirose, C. Matsumoto et al. // Proc. SPIE, 3446, p. 29 (1998). 6. C. Matsumoto, T. Takahashi, K. Takizawa et al. // IEEE Trans. Nucl. Sci. 45, p. 428 (1998).
https://doi.org/10.1109/23.682421
7. T. Takahashi, B. Paul, K.Hirose et al. // Nucl. Instr. and Meth. A436, p. 111 (2000).
8. T. Takahashi, S. Watanabe, G. Sato et al. // IEEE Trans. Nucl. Sci. 48, p. 287 (2001).
https://doi.org/10.1109/23.940067
9. T. Takahashi, S. Watanabe //Ibid. 48, p. 950 (2001).
https://doi.org/10.1109/23.958705
10. Home page of Amptek Inc. www.amptek.com
11. S. Sze, Physics of semiconductor devices, 2nd ed., Wiley, New York (1981) p. 245.
12. D.M. Hofmann, W. Stadler, P. Chrismann, B.K. Meyer, Defects in CdTe and Cd1-xZnxTe // Nucl. Instr. and Meth. A380, p. 117 (1996).
https://doi.org/10.1016/S0168-9002(96)00287-2
13. R. Grill, J. Franc, P. Höschl et al. // IEEE Trans. Nucl. Sc. 49, N3, p. 1 (2002).
https://doi.org/10.1109/TNS.2002.1039650
14. L.A. Kosyachenko, A.V. Markov, S.E. Ostapov et al. // Semiconductors 36, p. 1218 (2002).
https://doi.org/10.1134/1.1513859
15. L.A. Kosyachenko, A.V. Markov, Ye.L. Maslyanchuk et al. // Ibid. 37, p. 1373 (2003).
https://doi.org/10.1134/1.1634656