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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 058-060.
Amphoteric center of luminescence in CdS
Taras Shevchenko Kyiv National University, Physics Department
2, prospect Academician Glushkov, 03022 Kyiv, Ukraine,
Abstract. The impurity photoluminescence of cadmium sulphide crystals is studied. The
luminescence intensity dependences on temperature from 80 to 300 K are obtained for
the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV luminescence intensity has a peak
between 100 and 150 K. Both these bands are associated with emission of the center
based on the VCd-type intrinsic point defect. The results can be explained within the
framework of the theory of amphoteric centers of charge carrier recombination.
Keywords: cadmium sulphide, photoluminescence, amphoteric center of recombination.
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