Semiconductor Physics, Quantum Electronics and Optoelectronics, 8 (2) P. 058-060 (2005).

References

1. V. Ryzhykov, High-efficiency semiconductor scintillation detectors based on II-VI compounds, NIITEKhIM, Moscow (1984) (in Russian).
2. O.V. Vakulenko, V.D. Ryzhykov, B.M. Shutov, Nature of the long-wave luminescence of ZnSe:Zn // Belorus. J. Appl. Spectrosc. 49 (3), p. 439-444 (1988).
https://doi.org/10.1007/BF00662787
3. O.V. Vakulenko and V.M. Kravchenko, Luminescent properties of semiconductors with amphoteric centers of recombination // Phys. status solidi (b) 211, p. 839-846 (1999).
https://doi.org/10.1002/(SICI)1521-3951(199902)211:2<839::AID-PSSB839>3.0.CO;2-Z
4. V.V. Serdjuk, Ju.F. Vaksman, Semiconductor luminescence, Vyshcha Shkola, Kiev-Odessa (1988) (in Russian).
5. O.V. Vakulenko, M.P. Lysytsa, Optical recharging the impurity in semiconductors, Naukova Dumka, Kyiv, (1992) (in Russian).
6. O.V. Vakulenko, V.N. Suprunenko, V.D. Ryzhykov, Kinetics of the impurity luminescence in semiconductors with amphoteric centers of recombination // Ukr. J. Phys. 35 (10), p.1485- 1489 (1990).