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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 001-003.
Effect of weak magnetic field on structural arrangement of extrinsic
oxygen atoms and mechanical properties of silicon monocrystals
1Taras Shevchenko Kyiv National University, Physics Department,
2, build 1, Academician Glushkov prospect, 03680 Kyiv, Ukraine
Phone: +38 (044) 526-45-37
E-mail: Yu_L_Kolchenko@univ.kiev.ua
Abstract. IR spectroscopy study is indicative of the change in the relative concentration
of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic
field. This is an evidence of a considerable effect of magnetic field on the defect structure
of the investigated crystals.
Keywords: silicon, magnetic field, IR spectroscopy, oxygen precipitates, interstitial
oxygen, microhardness.
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