Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 9 N 2

Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 001-003.
Abstract | Full text (PDF)

Yu.A. Asnis, P.I. Baranskii, V.M. Babich, S.P. Zabolotin, Yu.G. Ptushinskii, V.G. Sukretnyi
Yu.A. Asnis, P.I. Baranskii, V.M. Babich, S.P. Zabolotin, Yu.G. Ptushinskii, V.G. Sukretnyi
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 004-007.
Abstract | Full text (PDF)

Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
R.S. Madatov, B.G. Tagiyev, A.I. Najafov, T.B. Tagiyev, I.A. Gabulov, Sh.P. Shakili
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 008-011.
Abstract | Full text (PDF)

The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
S. Berrah, H. Abid, A. Boukortt
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 012-016.
Abstract | Full text (PDF)

Effect of symmetry center losses on energy bands and carrier kinematics in Zn3As2 and Cd3As2
G. Chuiko, N. Don, V. Martyniuk, D. Stepanchikov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 017-022.
Abstract | Full text (PDF)

Simulation of strain fields in GaSb/InAs heteroepitaxial system
S.V. Shutov, Ye.A. Baganov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 023-025.
Abstract | Full text (PDF)

Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy
A.N. Morozovska
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 026-033.
Abstract | Full text (PDF)

Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs
S. Khemissi, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi, S. Amourache
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 034-039.
Abstract | Full text (PDF)

Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators
Ibrahim Ahmad, Yeap Kim Ho, Burhanuddin Yeop Majlis
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 040-044.
Abstract | Full text (PDF)

Third order nonlinear optical response of PbS quantum dots
S. Chowdhury, A.M.P. Hussain, G.A. Ahmed, D. Mohanta, A. Choudhury
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 045-048.
Abstract | Full text (PDF)

Ge/Si heterojunction photodetector for 1.064 μm laser pulses
Raid A. Ismail, Jospen Koshapa, Omar A. Abdulrazaq
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 049-052.
Abstract | Full text (PDF)

Analysis of radiation patterns and feed illumination of the reflector antenna using the physical and geometrical optics
N. Merabtine, A. Boualleg, M. Benslama
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 053-057.
Abstract | Full text (PDF)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 058-060.
Abstract | Full text (PDF)

Micropatterning in bistable cholesteric device with Bragg's reflection
M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 061-064.
Abstract | Full text (PDF)

Synthesis of TiO2 nanoparticles by hydrolysis and peptization of titanium isopropoxide solution
S. Mahshid, M. Sasani Ghamsari, M. Askari, N. Afshar, S. Lahuti
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 065-067.
Abstract | Full text (PDF)

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 069-074.
Abstract | Full text (PDF)

CdSe nanoparticles grown with different chelates
Yu.Yu. Bacherikov, M.O. Davydenko, A.M. Dmytruk, I.M. Dmitruk, P.M. Lytvyn, I.V. Prokopenko, V.R. Romanyuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 075-079.
Abstract | Full text (PDF)

Synthesis and properties of semiconductor solid solutions (inSb)1-x(CdTe)x
E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 080-086.
Abstract | Full text (PDF)

Discrimination of the saturated vapours of alcohols by the responses of assembly of piezoquartz sensors covered with metal stearates and their complexes with octadecylamine
A.P. Filippov, P.E. Strizhak, D.I. Denisyuk, T.G. Serebry, T.S. Ivaschenko
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 087-091.
Abstract | Full text (PDF)

The influence of Cr concentration on time resolution of GaAs detectors
L.L. Fedorenko, L.F. Linnik, L.G. Linnik, M.M. Yusupov, E.A. Solovyov, E. Sirmulis
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 092-094.
Abstract | Full text (PDF)

Determination of dominant type of defects in Cz-Si single crystals after irradiation with high-energy electrons
V.V. Dovganyuk, I.M. Fodchuk, O.G. Gimchinsky, A.V. Oleinych-Lysyuk, A.I. Nizkova
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.2. P. 095-103.
Abstract | Full text (PDF)