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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 008-011.
Optical and photoelectrical properties of lamellar
gallium sulfide single crystals irradiated by γ-quanta
Institute of Radiation Problems of Azerbaijan National Academy of Sciences
9, F. Agayev str., Baku, AZ 1143, tel./fax: (99412) 4398318
Abstract. The influence of γ-quanta irradiation on photoelectrical and optical properties
of lamellar GaS single crystals at different temperatures has been investigated. It is
determined that the irradiation of pure crystals at the radiation dose equal to 30 krad
results in the creation of shallow compensative acceptors, which are photoactive
recombination centers (r-centers), and as a result of this both the photosensitivity and a
luminescence connected with r-centers are increased. Irradiation with a radiation dose
more than 100 krad results in the quenching of both photosensitivity and recombination
luminescence due to formation of complexes [V Ga V S ]. It is proposed that radiative
recombination centers arising in the course of irradiation is conditioned by sulfur hole
and interstitial gallium atoms.
Keywords: photoluminescence, photoconductivity, single crystal, exciton, intra-central
transition.
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