References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (2) P. 012-016 (2006).
DOI: https://doi.org/10.15407/spqeo9.02.012

References

1. S. Nakamura, M. Senoh, S. Nagahma, N. Iwasa, T. Yamada, T. Matsuahita, H. Kiyoku, and Y. Sugimoto // Jpn J. Appl. Phys. 35, p. 174 (1996). https://doi.org/10.1143/JJAP.35.L74

2. T. Lei, T.D. Moustakas, R.J. Graham, Y. He, and S.J. Berkowitz // J. Appl. Phys. 71, p. 4933 (1992). https://doi.org/10.1063/1.350642

3. S.J. Hwang, W. Shan, R.J. Hauenstein, and J.J. Song // Appl. Phys. Lett. 64, p. 2928 (1994). https://doi.org/10.1063/1.111414

4. A. Rubio, J.L. Corkill, M.L. Cohen, E.L. Shirley, and S.G. Louie // Phys. Rev. B 48, 11810 (1993). https://doi.org/10.1103/PhysRevB.48.11810

5. E.A. Albanesi, W.R.L. Lambrecht, and B. Segall // Phys. Rev. B 48, 17841(1993). https://doi.org/10.1103/PhysRevB.48.17841

6. A.F. Wright and J.S. Nelson // Phys. Rev. B 50, p. 2159 (1994). https://doi.org/10.1103/PhysRevB.50.2159

7. S. Strite and H. Morkoc // J. Vac. Sci. Technol. B 10, p. 1237 (1992). https://doi.org/10.1116/1.585897

8. H. Muller, R. Trommer, M. Cardona and P. Vogl // Phys. Rev. B 21, p.4879 (1980). https://doi.org/10.1103/PhysRevB.21.4879

9. C. Menoni, H. Hochheimer, and I. Spain // Phys. Rev. B 33,p. 5896 (1986). https://doi.org/10.1103/PhysRevB.33.5896

10. R. Zallen and W. Paul // Phys. Rev. 155, p. 703 (1967). https://doi.org/10.1103/PhysRev.155.703

11. G. Pitt // J. Phys. C: Solid State Phys. 6, p.1586 (1973). https://doi.org/10.1088/0022-3719/6/9/016

12. Y. Vohra, S.T. Weir, and A.L. Ruoff // Phys. Rev. B 31, p.7344 (1985). https://doi.org/10.1103/PhysRevB.31.7344

13. P.E. Van Camp, V.E. Van Doren and J.T. Devreese // Phys. Rev. B 41, p.1598 (1990). https://doi.org/10.1103/PhysRevB.41.1598

14. K. Kim, W.R.L. Lambrecht, and B. Segall // Phys. Rev. B 50, p.1502 (1994). https://doi.org/10.1103/PhysRevB.50.1502

15. N.E. Christensen and I. Gorczyca // Phys. Rev. B 50, p. 4397 (1994). https://doi.org/10.1103/PhysRevB.50.4397

16. A.A. Kelsey and G.J. Ackland // J. Phys.: Condens. Matter 12, p. 7161 (2000). https://doi.org/10.1088/0953-8984/12/32/301

17. M.H. Tsai, J.D. Dow and R.V. Kasowski // J. Mater. Res. 7, p. 2205 (1996). https://doi.org/10.1557/JMR.1992.2205

18. P. Hohenberg and W. Kohn // Phys. Rev. 136, No 3B, p. 864 (1964). https://doi.org/10.1103/PhysRev.136.B864

19. W. Kohn and L.J. Sham // Ibid. 140, No 4A, p. 1133 (1965). https://doi.org/10.1103/PhysRev.140.A1133

20. G. Ortiw // Phys. Rev. B 45, 11328 (1992). https://doi.org/10.1103/PhysRevB.45.11328

21. C. Browe, G. Sugiyama, and B.J. Alder // Phys. Rev. B 50, 14838 (1994). https://doi.org/10.1103/PhysRevB.50.14838

22. P. Blaha, K. Schwarz, G.K.H. Madsen, D. Kvas-nicka, J. Luitz, WIEN2k, An augmented plane wave plus local orbitals program for calculating crystal properties. Vienne University of Tech-nology, Vienna, Austria, 2001.

23. F.D. Murnaghan // Proc. Nat. Acad. Sci. USA 30, p. 244 (1944).

24. R. Jeanloz // Phys. Rev. B 38, p. 805 (1988). https://doi.org/10.1103/PhysRevB.38.805

25. S.Q. Wang and H.Q. Ye // J. Phys.: Condens. Matter 14, p.9579-9587 (2002). https://doi.org/10.1088/0953-8984/14/41/313

26. K. Kim, W.R.L. Lambrecht, and B. Segall // Phys. Rev. B 53,16 310 (1996).

27. A. Trampert, O. Brandt, and K.H. Ploog, in: Crys-tal structure of group III nitrides, edited by J.I. Pan-kove and T.D. Moustakas, Semiconductors and semimetals, Vol. 50. Academic, San Diego, 1998.

28. M.E. Sherwin and T.J. Drummond // J. Appl. Phys. 69, p. 8423 (1991). https://doi.org/10.1063/1.347412

29. J.H. Edgar, Properties of group III nitrides (Electronic Materials Information Service (EMIS), Data reviews series). Institution of Electrical Engineers, London, 1994.

30. S. Logothetidis, J. Petalas, M. Cardona and T.D. Moustakas // Phys. Rev. B 50 18 017 (1994). https://doi.org/10.1103/PhysRevB.50.18017

31. R. Goldhan, S. Shokhovets, in: III-nitride semicon-ductors optical properties II, M.O. Mansrehm H.X. Jiang, editors, Taylors and Francis, p. 7363, 2002.

32. H. Harima // J. Phys.: Condensed Matter 14, p. R967-R993 (2002). https://doi.org/10.1088/0953-8984/14/38/201

33. D.L. Camphausen, G.A. Neville Conell and W. Paul // Phys. Rev. Lett. 26, p. 184 (1971). https://doi.org/10.1103/PhysRevLett.26.184

34. V.W.L. Chin, T.L. Tansley, and T. Osotchan // J. Appl. Phys. 75, p. 7365-7372 (1994). https://doi.org/10.1063/1.356650

35. V.I. Gavrilenko and R.Q. Wu // Phys. Rev. B 61, p. 2632 (2000). https://doi.org/10.1103/PhysRevB.61.2632

36. J. Chen, Z.H. Levine, and J.W. Wilkins // Appl. Phys. Lett. 66, p. 1129 (1995). https://doi.org/10.1063/1.113835

37. U. Köhler, D.J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, and R. Goldhahn // J. Appl. Phys. 85, p. 404 (1999). https://doi.org/10.1063/1.369398

38. P. Perlin, I. Gorczyca, N. E. Christensen, I. Grzegory, H. Teisseyre, and T. Suski // Phys. Rev. B 45, 13 307 (1992). https://doi.org/10.1103/PhysRevB.45.13307

39. K. Karch and F. Bechstedt // Phys. Rev. B 56, p. 7404 (1997). https://doi.org/10.1103/PhysRevB.56.7404

40. L. Akasaki and M. Hashimoto // Solid State Communs 5, 851 (1967). https://doi.org/10.1016/0038-1098(67)90313-4

41. J. Misek and F. Srobar // Phys. Rev. B 61, P. 6720 (2000).

42. T.S. Moss // Proc. Phys. Soc. B 63, 167 (1950). https://doi.org/10.1088/0370-1301/63/3/302

43. Y. Zhongqin, X. Zhizhong // Phys. Rev. B 54, 17 577 (1996).