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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 012-016.
The first principle calculation of electronic and optical properties
of AlN, GaN and InN compounds under hydrostatic pressure
Applied materials laboratory, university of Sidi Bel Abbes, 22000 Algeria
1E-mail: sm_berrah@yahoo.fr
2E-mail: abid_hamza@yahoo.fr
3E-mail: boukortta@yahoo.fr
Abstract. Numerical simulation based on FPLAPW calculations is applied to study the
lattice parameters, bulk modulus, band energy and optical properties of the zincblende
binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a
good agreement with experimental and theoretical values.
Keywords: lattice parameter, bulk modulus, pressure coefficient, refraction index,
FPLAPW, WIEN(2k).
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