|
Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (2) P. 023-025 (2006).
DOI:
https://doi.org/10.15407/spqeo9.02.023
References
1. M.J. Yang, C.H. Yang, B.R. Bennett, and B.V. Shanabrook, Evidence of a hybridization gap in "semimetallic" InAs/GaSb systems // Phys. Rev. Lett. 78, p. 4613-4616 (1997).
https://doi.org/10.1103/PhysRevLett.78.4613 | | | | 2. G.J. Conibeer, C.W. Bumby, R.J. Nicholas, and N.J. Mason, Towards a GaSb-InAs tandem junction TPV cell // Proc. of 17th European PV Solar Energy Conf. and Exhibition, Munich, Germany, p. 175-179 (2001). | | | | 3. M.G. Mil'vidskij, V.B. Osvenskij, Structural defects in semiconductor epitaxial layers. Metallurgija, Moscow, 1985 (in Russian). | | | 4. J.H. Van-der-Merwe, Crystal interfaces // J. Appl. Phys. 34, p. 117-127 (1963).
https://doi.org/10.1063/1.1729051 | | | | 5. P.I. Baranskij, V.P. Klochkov, I.V. Potykevich, Semiconductor electronics. Reference book. Naukova Dumka, Kiev, 1975 (in Russian). | | | | 6. R.H. Gallagher, Finite element analysis. Prentice-Hall, Inc. Englewood Cliffs, New Jersey, 1975. | | | 7. F.R.N. Nabarro // Proc. Phys. Soc. 59, p. 256-272 (1947).
https://doi.org/10.1088/0959-5309/59/2/309 | | |
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