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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 023-025.
Simulation of strain fields
in GaSb/InAs heteroepitaxial system
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: shutov_sv@mail.ru
Phone/Fax +38 (044) 5255457
Abstract. Mechanical strains taking place in GaSb/InAs heterosystem in the presence of
misfit dislocation network are investigated. Distributions of energy of strains and
deformations in the system with misfit dislocation network were found using two-
dimensional simulation. The radius of the dislocation core, depths of the strain
penetration into the substrate and epitaxial layer as well as change of the material
bandgaps near the heterointerface were calculated.
Keywords: misfit dislocation, strain distribution, GaSb, InAs, heteroepitaxy.
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