Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (2) P. 049-052 (2006).
DOI: https://doi.org/10.15407/spqeo9.02.049

References

1. S. Have // Appl. Opt. 26, p. 121 (1987).
2. S.M. Benjamin and J. Hwang // J. Appl. Phys. 75, p. 388 (1994).
3. O. Nur and M. Willander // J. Appl. Phys. 78, p. 7063 (1995).
https://doi.org/10.1063/1.360411
4. J. Kolodzey // Vacuum Solutions 9, p. 5 (1999).
5. K.H. Hsich and L.F. Eastman // IEEE Electron. Devices Soc. 84, p. 729 (1984).
6. X. Shao, S. Rommel, B. Orner, H. Feng, M. Dashiell, R. Troeger, J. Kolodzey, P. Berger // Appl. Phys. Lett. 72, p. 1860 (1998).
https://doi.org/10.1063/1.121207
7. E. Morgan, R. Nemanich // J. Appl. Phys. 95, p. 115 (2004).
8. P. Rande, H. Takeuchi, V. Subramanian, T. King // Electrochem. and Solid-State Lett. 5, p. G5 (2002).
https://doi.org/10.1149/1.1432784
9. Raid A. Ismail, Accepted for publication in Materials Letters.
10. H. Takeuchi, P. Rande, V. Subramanian, T. King // Appl. Phys. Lett. 80, p. 3706 (2002).
https://doi.org/10.1063/1.1480485
11. L. Colace, G. Masini, G. Assanto, H. Chiao, K. Wada, L. Kimerling // Appl. Phys. Lett. 76, p. 1231 (2000).
https://doi.org/10.1063/1.125993