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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 049-052.
Ge/Si heterojunction photodetector for 1.064 μm laser pulses
1Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq
E-mail: raidismail@yahoo.com
*Present address: Faculty of education, Hadrhamout University, Yemen
Abstract. Iso- and anisotype heterojunction Ge/Si photodetectors were made by
depositing Ge layer onto monocrystalline Si using a vacuum evaporation technique.
These detectors before and after annealing were utilized to detect 1.064 µm Nd:YAG
laser pulses. The study also included determination of the optimal Ge thickness and
annealing conditions. The experimental results show that the photoresponse was highly
improved after classical thermal annealing and rapid thermal annealing (RTA). The
voltage responsivity and signal rise time results strongly depended on the annealing type
and conditions. It was found that the optimal conditions can be obtained for n-Ge/p-Si
photodetector prepared with Ge 200 nm thick and treated with RTA at 500 ºC for 25 s.
Keywords: Ge/Si photodetector, thermal annealing, Nd:YAG laser pulse.
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