Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 058-060.
https://doi.org/10.15407/spqeo9.02.058

Ohmic contacts to Hall sensors based on n-InSb–GaAs(i) heterostructure
N.S. Boltovets1, R.V. Konakova2, Ya.Ya. Kudryk2, V.V. Milenin2, V.F. Mitin2, E.V. Mitin2, O.S. Lytvyn2, L.M. Kapitanchuk3

1State Enterprise Research Institute “Orion”, Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
3E.O. Paton Institute of Electric Welding, NAS of Ukraine, Kyiv, Ukraine

Abstract. We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi- insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change the phase composition of the metallization. This ensures thermal stability of the contacts and Hall sensors made on the basis of Au–Ti–n-InSb–GaAs(i) structures.

Keywords: n-InSb–GaAs(i) heterostructure, Au–Ti metallization, Hall sensors.

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