Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (2) P. 061-064 (2006).
DOI:
https://doi.org/10.15407/spqeo9.02.061
References
1. S.T. Wu, D.K. Yang, Reflective liquid crystal displays.John Willey& Sons, Ltd (2001). | | 2. A. Kozachenko, P.Oleksenko, V. Sorokin, V.Nazarenko // IDRC'97, p.148-151 (1997). | | 3. M.Schadt, H. Seiberle, A.Schuster // Nature, 381, 212(1996). https://doi.org/10.1038/381212a0 | | 4. M. Schadt, K. Schmit, V. Kozinkov, V. Chigrinov // Jpn J. Appl. Phys. 31, p. 2155 (1992). https://doi.org/10.1143/JJAP.31.2155 | | 5. Z.M. Sun, J.M. Engels, I. Dozov and G. Durand // J. De Phys. 2, p. 59-73 (1994). | | 6. B. Wen, M.P. Mahajan, C. Rosenblatt // Appl. Phys. Lett. 76, No 10, p. 1240-1242 (2000) https://doi.org/10.1063/1.125996 | | 7. O. Yaroshchuk, Yu. Zakrevskyy, A. Dobrovolsky, S. Pavlov // Proc. SPIE, 4418, p. 49 (2001). | | 8. Y. Zhao, X.Tong // Adv. Mater. 15, No 17, p. 1431-1435 (2003). https://doi.org/10.1002/adma.200305120 | | 9. A.A. Vasiliev et al. // Optic, 67(3), p. 223-236 (1984). https://doi.org/10.1126/science.223.4633.236-a | | 10. N.F. Kovtonyuk, E.N. Sal'nikov, Photosensitive MOS-devices for image transducers. Radio i svyaz', Moscow (1990) (in Russian). | | 11. M.I. Gritsenko, S.I. Kucheev, P.M. Litvin // Proc. of 13th SID Symposium"Advanced Display Techno-logies", Raubichi (Belarus), September 7-10, p. 207-210, 2004. | | 12. N.I. Gritsenko, S.I. Kucheev, P.M. Litvin, Nematic diffractive grating induced by nanotreated silicon oxide surface // Proc. of 11th IDW'04, Japan, 2004. | | 13. R.M. Burger, R.P. Donovan, Oxidation, diffusion and epitaxy. Fundamentals of silicon integrated device technology. Vol.1. Mir, Moscow (1969) (in Russian). | | 14. S.G. Konnikov, A.F. Sidorov, Electronic probe methods of semiconductor materials and devices investigation. Energiya, Moscow (1978) p.134 (in Russian). | |
|
|