Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 061-064.
https://doi.org/10.15407/spqeo9.02.061

Micropatterning in bistable cholesteric device with Bragg’s reflection
M.I. Gritsenko1, S.I. Kucheev1, P.M. Lytvyn2, V.G. Tishenko3, V.M. Tkach4, V.B. Yelshansky4

1Chernigov State University, 53, G. Polubotka str., 14038 Chernigov, Ukraine, e-mail: skucheev@yahoo.com
2V. Lashkaryov Institute of Semiconductor Physics, 45, prospect Nauky, 03028 Kyiv, Ukraine
3Kharkov State University, Kharkov, Ukraine
4Institute of Super-Hard Materials, Kyiv, Ukraine

Abstract. In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO 2 structure in which a potential relief on SiO 2 surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO 2 film, which is formed by thermodiffusion of aluminum atoms.

Keywords: liquid crystal, selective reflection, silicon, patterning electrode.

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