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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 080-086.
Synthesis and properties of semiconductor solid solutions
(ІnSb)1−х(СdТе)x
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. We consider the growth technology and investigations of indium antimonide
doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio.
The optimal modes of single crystal synthesis and crystallization are determined. It is
shown that, when doping the indium antimonide, its lattice parameter changes
considerably. This leads to deformation of the electron energy spectrum, changes the
bandgap and charge carrier effective mass and affects the optical and electrical properties
of indium antimonide samples. As a result, such material becomes suitable for fabrication
of IR photodetectors.
Keywords: indium antimonide, lattice parameter, effective mass, electron energy
spectrum.
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