Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (2) P. 095-103 (2006).
DOI:
https://doi.org/10.15407/spqeo9.02.095
References
1. T.G. Gutsulyak, V.T. Maslyuk, A.V. Оleynich-Lysyuk, N.D. Raransky, I.M. Fodchuk, Defect formation in silicon crystals after high-energy electron and γ-radiation // Ukrainsky Fizychny Zhurnal 48(9), p. 43-49 (2003) (in Ukrainian). | | 2. V.S. Vavilov, N.A. Ukhin, Radiation defects in semiconductors and semiconductor devices. Atomizdat Publ., Moscow, 1969 (in Russian). | | 3. B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinsky, Metastable and bistable defects in silicon // Uspekhi Fizich. Nauk 170(2), p. 143-155 (2000) (in Russian). https://doi.org/10.3367/UFNr.0170.200002b.0143 | | 4. I.I. Kolkovsky, V.V. Lukyanitsa, Peculiarities of accumulation of radiation defects of vacancy and interstitial types in dislocation-free silicon with various oxygen content // Fizika i Tekhnika Poluprovodnikov, 31(4), p. 405-408 (1997) (in Russian). https://doi.org/10.1134/1.1187183 | | 5. L.S. Berman, V.A. Zhepko, V.N. Lomasov, V.I. Tkachenko, On the nature of radiation defects in n-silicon exposed to electron irradiation with energy close to defect formation threshold // Ibid. 28(1), p. 2129-2131 (1989) (in Russian). | | 6. V.B. Neymash, M.M. Kras'ko, A.M. Kraichynsky, Generation of radiation and thermal defects in silicon under "hot" irradiation // Ukrainsky Fizychny Zhurnal, 47(1), p. 50-53 (2002) (in Ukrainian). | | 7. N.D. Raransky, I.M. Fodchuk, V.T. Maslyuk, A.G. Gimchynsky, P.E. Marmus, X-ray diffraction studies of structural changes in Si single crystals, irradiated with high-energy electrons // Neorganich. Mater. 33(2), p. 139-141 (1997) (in Russian). | | 8. V.M. Babich, N.I. Bletskan, E.F. Venger, Oxygen in silicon single crystals. Interpress Ltd, Kyiv, 1997 (in Russian). | | 9. O.G. Gimchinsky, T.G. Gutsulyak, A.V. Olijnich-Lysjuk, N.D. Raransky, I.M. Fodchuk, Evolution of defective structure of the irradiated silicon during natural ageing // Semiconductor Physics, Quantum Electronics and Optoelectronics 6(3-4), p. 43-49 (2003). | | 10. O.G. Gimchynsky, B.I. Gutsulyak, A.V. Oleynich-Lysyuk, M.D. Raransky, Z.Swiatek, Structural changes of silicon crystals after high energy electron irradiation // Proc. SPIE. Bellingham. 5477, p. 215-221 (2004). https://doi.org/10.1117/12.559884 | | 11. K. Reivi, Defects and impurities in semiconductor silicon // Mir, Moscow, 1984 (in Russian). | | 12. J.R. Patel, K.A. Jackson, H. Reiss, Oxygen precipitation and stacking-fault formation in dislocation-free silicon // J. Appl. Phys. 48(12), p. 5279-5288 (1977). https://doi.org/10.1063/1.323558 | | 13. S. Mahajan, G.A. Rozgonyj, D. Brasen // Appl. Phys. Lett. 30, p. 73 (1977). https://doi.org/10.1063/1.89292 | | 14. М.А. Krivoglaz, X-ray and neutron diffraction in nonperfect crystals. Naukova Dumka, Kyiv, 1983 (in Russian). | | 15. V.B. Molodkin, A.I. Nizkova, A.P. Shpak et al.,Diffractometry of nanodimensional defects and crystal heterolayers. Akademperiodika, Kyiv, 2005 (in Russian). | | 16. A.P. Shpak, V.B. Molodkin, A.I. Nizkova, M.T. Kogut, E.V. Pervak, Influence of damaged surface layer on dynamic scattering in crystals with defects // Uspekhi Fiziki Metallov 5,p. 50-72 (2004) (in Russian). https://doi.org/10.15407/ufm.05.03.285 | | 17. V.G. Bar'yahtar, E.N. Gavrilova, V.B. Molodkin, S.I. Olikhovskii // Metallofizika 14(11), p. 68 (1992) (in Russian). | | 18. V.G. Bar'yahtar, M.V. Kovalchuk, Yu.M. Litvinov, et al. // Nucl. Instrum. and Meth. in Physics A, 308, p. 291 (1991) (in Russian). | | 19. E.N. Gavrilova, E.N. Kislovskii, V.B. Molodkin, S.I. Olikhovskii // Metallofizika 14(3), p. 70 (1992) (in Russian). | | 20. V.G. Bar'yahtar, V.V. Nemoshkalenko, V.B. Molodkin et al. // Metallofizika 15(12), p. 18 (1993) (in Russian). | | 21. V.V. Nemoshkalenko, V.B. Molodkin, E.N. Kislovskii et al. // Metallofiz. i Noveyshiye Tekhnologii 16(2), p. 48 (1994) (in Russian). | | 22. V.B. Molodkin, S.I. Olikhivski, M.E. Osinovski et al., Integral intensity of dynamic diffraction of radiation in crystals with uniform distribution of defects // Metallofizika 6(2), p. 18-22 (1984) (in Russian). | | 23. I.E. Talanin, Mechanism of formation and properties of growth microdefects in dislocation-free silicon single crystals // Thesis for D. Sc. Degree. Chernivtsi, 2005. | | 24. V.V. Voronkov, M.G. Mil'vidsky, V.Ya. Reznik, N.I. Puzanov, А.М. Eidenson, Oxygen precipitation in silicon with various growth microdefects // Kristallografiya 35(5), p. 1197-1204 (1990) (in Russian). | |
|
|