Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 2. P. 095-103.
https://doi.org/10.15407/spqeo9.02.095

Determination of dominant type of defects in Cz-Si single crystals after irradiation with high-energy electrons
V.V. Dovganyuk1, І.М. Fodchuk1,2, О.G. Gimchinsky1, А.V. Oleinych-Lysyuk1, А.І. Nizkova2

1Yu. Fedkovich Chernivtsi National University, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine
2G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, Kyiv

Abstract. Theoretical and experimental studies of silicon crystals irradiated with high- energy electrons (Е = 18 MeV) were made using the method of full integral X-ray reflectivity. To explain peculiarities of full integral reflectivity behaviour versus radiation dose and the order of reflection, the relationships of generalized dynamic theory of the Bragg X-ray diffraction in crystal comprising several defect types were used. The presence of several types of dominant defects in crystals allows closer tracing the dynamics of full integral reflectivity change versus the order of reflection and radiation dose, as well as estimating the contribution of each defect type to the diffusion component of X-ray scattering.

Keywords: irradiation with high-energy electrons, X-ray reflectivity, Cz-Si, oxygen- containing defects.

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