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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 2. P. 001-005.
Investigation of electron-phonon interaction
in bulk and nanostructured semiconductors
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. In this paper, the problem of electron-phonon interaction (EPI) in
semiconductor crystals and quantum dots (QDs) is considered. It is shown that the model
of strong EPI developed for organic molecular crystals can be successfully applied to
bulk and nanosized semiconductors. The idea of the approach proposed here is to
describe the experimental Raman (or absorption) spectra containing the phonon replicas
theoretically by varying the EPI constant. The main parameter of the theoretical
expression describing the experimental spectrum is the ratio of EPI constant to the
frequency of the corresponding phonon mode. Based on the experimental and theoretical
results, we have found that decreasing the size of CdS x Se 1-x QDs embedded in
borosilicate glass matrix results in some enhancement of electron-phonon interaction.
Keywords: electron-phonon interaction, Raman scattering, quantum dots.
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