Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 10 N 2

Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 001-005.
Abstract | Full text (PDF)

Laser-induced incandescence in aqueous carbon black suspensions: the role of particle vaporization
Ju.Ju. Rulik, N.M. Mikhailenko, S.E. Zelensky, A.S. Kolesnik
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 006-010.
Abstract | Full text (PDF)

Investigation of the direct/indirect exciton transition in the double quantum well system based on
Cd1-yMgyTe/ Cd1-xMnxTe in applied magnetic field

S.B. Lev, V.I. Sugakov, and G.V. Vertsimakha
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 011-015.
Abstract | Full text (PDF)

Flexible electroluminescent displays
V.I. Vlaskin, S.I. Vlaskina, O.Yu. Koval, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 016-020.
Abstract | Full text (PDF)

Boron, aluminum, nitrogen, oxygen impurities in silicon carbide
S.I. Vlaskina, V.I. Vlaskin, S.A. Podlasov, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 021-025.
Abstract | Full text (PDF)

The influence of irradiation by electrons and -quanta on photoelectrical and optical properties of epitaxial
Pb1-xMnxTe film

Sh.M. Abbasov, I.R. Nuruyev*, T.B. Tagiyev, G.T. Agaverdiyeva, T.I. Kerimova,G.T. Ismayilova
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 026-028.
Abstract | Full text (PDF)

Isothermal growth kinetics of CdxHg1-xTe LPE layers
P.P. Moskvin, V.V. Khodakovsky
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 029-033.
Abstract | Full text (PDF)

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures
V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 034-039.
Abstract | Full text (PDF)

Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically
V.Ye. Primachenko, O.A. Serba, V.A. Chernobai, Ye.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 040-045.
Abstract | Full text (PDF)

Charge characteristics of the MOS structures with oxide films containing Si nanocrystals
.V. Begun, O.L. Bratus', A.A. Evtukh, E.B. Kaganovich, E.G. Manoilov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 046-050.
Abstract | Full text (PDF)

Out-of-plane optical transmittance of 2D photonic macroporous silicon structures
L.A. Karachevtseva, A.E. Glushko, V.I. Ivanov, O.O. Lytvynenko, V.F. Onishchenko, K.A. Parshin, O.J. Stronska
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 051-057.
Abstract | Full text (PDF)

Frequency-dependent dielectric coefficients of TlInS2 amorphous films
S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 058-061.
Abstract | Full text (PDF)

Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics
N.L. Dmitruk, O.I. Mayeva, A.V. Korovin, S.V. Mamykin, M.V. Sosnova, O.B. Yastrubchak
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 062-071.
Abstract | Full text (PDF)

Investigation of light polarization in CdS in the presence of two-photon absorption
M.R. Kulish, M.P. Lisitsa, N.I. Malysh
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 072-075.
Abstract | Full text (PDF)

Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate
Viktor Lysiuk, Vasyl Staschuk, Mykola Kluy, Oleg Vakulenko, Leonid Poperenko
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 076-080.
Abstract | Full text (PDF)

Organic iso-type pentacene - lead phthalocyanine heterostructures
Ya. Vertsimakha, P. Lutsyk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.2. P. 081-085.
Abstract | Full text (PDF)