Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 2. P. 029-033.

Isothermal growth kinetics of CdxHg1-xTe LPE layers
P.P. Moskvin, V.V. Khodakovsky

Zhytomyr State Technological University 103, Chernyakhovsky str., 10005 Zhytomyr, Ukraine E-mail:

Abstract. Within the diffusion-limited growth model, the kinetic analysis of the LPE process for Te Hg Cd x 1 x − solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations of components are connected by the equations of phase equilibria in the frame of the model of polyassociated solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system.

Keywords: LPE, growth kinetics, semiconductor solid solutions.

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