References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (2) P. 034-039 (2007).
DOI: https://doi.org/10.15407/spqeo10.02.034

References

1. K. Hirose, H. Nobira, T. Koike, S. Sakano and T. Hattory, Structural transition layer at SiO2/Si interface // Phys. Rev. B 59 (8), p. 5617-5621 (1999). https://doi.org/10.1103/PhysRevB.59.5617

2. V.S. Lysenko, T.N. Sytenko, V.I. Zimenko, and O.V. Snitko, Investigation of traps in the transition region of Si-SiO2 structures at cryogenic temperature // Phys. status solidi (a) p. 619-625 (1982). https://doi.org/10.1002/pssa.2210710239

3. V.S. Lysenko, T.N. Sytenko, O.V. Snitko, V.I. Zimenko, A.N. Nazarov, I.N. Osyuk, T.E. Rudenko, and I.P. Tyagulskii, Interrelation between surface states and transition layer defects in Si-SiO2 structures // Solid State Communs 57 (3), p.171-174 (1986). https://doi.org/10.1016/0038-1098(86)90132-8

4. Yu.V. Gomenyiuk, R.N. Litovski, V.S. Lysenko, I.N. Osiyuk, and I.P. Tyagulski, Thermally stimulated field emission of charge from traps in the transition layer of Si-SiO2 structures // Appl. Surf. Sci. 55 (1), p.179-185 (1992). https://doi.org/10.1016/0169-4332(92)90108-A

5. Yu.V. Gomenyuk, R.N. Litovski, V.S. Lysenko, I.N. Osiyuk, and I.P. Tyagulski, Current stoichiometry of field emission of charge from traps in the transition layer of implanted MIS structures // Appl. Surf. Sci. 59 (1), p. 91-94 (1992). https://doi.org/10.1016/0169-4332(92)90292-6

6. V.S. Lysenko, I.P. Tyagulski, A.N. Nazarov, I.N. Osiyuk, Yu.V. Gomenyuk, Research of thermally stimulated field emission in SIMOX structures at cryogenic temperatures // Optoelektronika i Poluprovodnikovaya Tekhnika 40, p. 88-95 (2005) (in Russian).

7. A. Evtukh, A. Kizjak, V. Litovchenko, C. Clays, and Simoen, Radiation characteristics of short pchannel MOSFET's of SOI substrates // Proc. "Science and technology of semiconductors on insulators structures and devices operating in a harsh environment". Kluwer, Dordrecht, 2005, 185, p. 221-226. https://doi.org/10.1007/1-4020-3013-4_23

1. V.E. Primachenko, B.M. Bulakh, S.I. Kirillova, V.A. Chernobai, E.F. Venger, Electronic properties of palladium doped porous silicon and decomposition of water without an external electric voltage on its basis // Ukr. Phys. J. 52(3), p. 236- 243 (2007).

2. V.E. Primachenko, I.V. Kud', S.I. Kirillova, V.A. Chernobai, Decomposition of water and application of electrode catalytic properties // Zhurnal Tekhnicheskoi Fiziki (2007) (be published) (in Russian).

3. V.E. Primachenko, A.A. Serba, V.A. Chernobai, E.F. Venger, Effect of oxidizing on water decomposition by catalytic active electrode on silicon based // Semiconductor Physics, Quantum Electronics and Optoelectronics 10(1), p.88 (2007). https://doi.org/10.15407/spqeo10.03.006

4. Physical encyclopedia. Encyclopediya Publ., Moscow, 1988 (in Russian).

5. Short chemical encyclopedia. Encyclopediya Publ., Moscow, 1963 (in Russian).

6. S.I. Kirillova, V.E. Primachenko, A.A. Serba, L.P. Tarasenko, V.A. Chernobai, Temperature dependence of surface potential on textural silicon surface // Optoelektronika i Poluprovodnikovaya Tekhnika N 27, p. 29-35 (in Russian).

7. H.B. Gray, Electrons and Chemical Bonding. Benjamin, New York, 1964.