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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 2. P. 034-039.
Influence of traps in gate oxide-Si film transition layers
on FD MOSFET’s characteristics at cryogenic temperatures
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
Abstract. The results of experiments on the influence of recharging the electron traps in
a Si-SiO 2 transition layer on the low-temperature characteristics of fully depleted silicon
in insulator MOSFET devices are presented. It is shown that the low-dose gamma-
radiation improves electrophysical parameters of the transition layer.
Keywords: GaAs field-effect transistor, Schottky barrier, CVC.
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