Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 2. P. 034-039.

Influence of traps in gate oxide-Si film transition layers on FD MOSFET’s characteristics at cryogenic temperatures
V.S. Lysenko*, I.P. Tyagulsky, I.N. Osiyuk , A.N. Nazarov

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
*Corresponding author: phone/fax +38(044)5256177; e-mail:

Abstract. The results of experiments on the influence of recharging the electron traps in a Si-SiO 2 transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gamma- radiation improves electrophysical parameters of the transition layer.

Keywords: GaAs field-effect transistor, Schottky barrier, CVC.

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