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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 2. P. 046-050.
Charge characteristics of the MOS structures
with oxide films containing Si nanocrystals
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine, e-mail: dept_5@isp.kiev.ua
Abstract. The processes of charge accumulation in the MOS structures with SiO 2 films
containing Si nanocrystals are investigated, depending on the conditions of their
formation by pulsed laser deposition. High-frequency capacity-voltage characteristics of
structures with the different thicknesses of films, sizes of Si nanocrystals, and their
densities in the case of doping the films with gold and without it are measured. It is
shown that the positive and negative charges are built-in, respectively, in the undoped
films and those doped with gold. At the record of C-V curves, the accumulation of a
positive charge is observed. The value of accumulated charge is higher in thin films and
in the films doped with gold. The obtained results testify the possibility of the use of
pulsed laser deposition for creation of memory structures based on the charge capture by
Si nanocrystals.
Keywords: silicon, quantum dot, capacity-voltage characteristics, non-volatile memory.
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