Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 2. P. 058-061.

Frequency-dependent dielectric coefficients of TlInS2 amorphous films
S.N. Mustafaeva1, M.M. Asadov2, K.Sh. Qahramanov3

1Institute of Physics, Azerbaijan National Academy of Sciences
2Institute of Chemical Problems, Azerbaijan National Academy of Sciences
3“Selen” Production Association, Azerbaijan National Academy of Sciences AZ 1143 Baku, G. Javid Ave., 33 E-mail:

Abstract. The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σ ac ) of amorphous films prepared by evaporation of TlInS 2 has been investigated at frequencies f = 5⋅10 4 …3.5⋅10 7 Hz. It is shown that, at f > 10 6 Hz, relaxation losses take place. It is established that the hopping conduction near the Fermi level occurs in TlInS 2 amorphous films at frequencies up to 3⋅10 6 Hz. The density of localized states at the Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS 2 films. For frequencies above 10 7 Hz, σ ac ( f ) ~ f 2 . Such a behavior is caused by optical transitions in TlInS 2 amorphous films.

Keywords: amorphous film, vapour deposition, Fermi level, dielectric properties, electrical conductivity.

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