Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 2. P. 076-080.

Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate
V.O. Lysiuk1,2, V.S. Staschuk1, M.I. Kluy2, O.V. Vakulenko1, L.V. Poperenko1

1Department of Physics, Taras Shevchenko Kyiv National University 1, Bld., 2, Academician Glushkov prospect, 03022 Kyiv, Ukraine Phone: +380 (44) 526-22-96; fax: +380(44) 526-45-07
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail:

Abstract. The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium tantalate” are implanted by Ar+ ions with an energy of 100 keV and a dose of 10^16 cm-2. Analyses of the systems by AFM and SEM have shown that the ion implantation essentially modifies the near-surface structure resulting in a change of its optical, electrical, and mechanical properties. Strong difference in the near-surface structures between implanted systems with Ni or Pd thin films is observed. Such a difference is explained by the heterogeneity of an ion beam and different properties of the materials. The application to the development of high-sensitive pyroelectric detectors with high damage threshold is proposed.

Keywords: ion implantation, thin films, pyroelectric detector.

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