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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 2. P. 101-123.
Hydrogen plasma treatment of silicon thin-film structures
and nanostructured layers
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Abstract. The review concentrates on the analysis of the RF hydrogen plasma effect on
thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern
basis of micro- and nanoelectronics. The especial attention is paid to athermic
mechanisms of transformation of defects in dioxide, SiO 2 -Si interface and SiO 2 -Si
nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing
of vacancy defects and the implanted impurity activation in a subsurface implanted
silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured
light emitting materials.
Keywords: silicon thin-film structures, hydrogen plasma treatment, nanostructured layer.
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