Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 2. P. 124-131.
https://doi.org/10.15407/spqeo11.02.124

Direct current transport mechanisms in n-InSe/p-CdTe heterostructure
P.M. Gorley1, I.V. Prokopenko2, Z.M. Grushka1, V.P. Makhniy1, O.G. Grushka1, O.A. Chervinsky1

1Yu. Fedkovych Chernivtsi National University 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine Phone: +38 03722 46877, fax: +38 03722 46877, e-mail: semicon@chnu.cv.ua
2V. Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine, phone: +38 044 5254449, e-mail: prokop@isp.kiev.ua

Abstract. The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current transport mechanisms in the structure. It was shown that misfit dislocations at the boundary between the semiconductors form a stable periodic structure acting as slow recombination centers for the carriers. The properties of the material suggest promising application perspectives for n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures and elevated radiation.

Keywords: heterojunction, n-InSe/p-CdTe, optical contact, current-voltage curve, misfit dislocations, current transport mechanisms, band diagram.

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