Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (2) P. 124-131 (2008).
DOI:
https://doi.org/10.15407/spqeo11.02.124
References
1. V.L. Bakumenko, Z.D. Kovaliuk, L.N. Kurbatov, V.G. Tagiev, V.F. Chishko, Properties of heterojunctions based on indium monoselenide InSe // Fizika Tekhnika Poluprov. 12, p. 374-377 (1978) (in Russian). | | 2. V.N. Katerynchuk, Z.D. Kovaliuk, V.A. Monasson, K.D. Tovstiuk, About current transport mechanism for GaSe-InSe // Fiz. Tekhn. Poluprov. 21, p. 380- 381 (1987) (in Russian). | | 3. S. Shigetomi, T. Ikari, Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction // J. Appl. Phys. 88, p. 1520-1524 (2000). https://doi.org/10.1063/1.373849 | | 4. S.I. Drapak, V.B. Orletskiy, Z.D. Kovaliuk, Changes of contact potential difference for a heterojunction n-InSe/p-GaSe during the aging process // Fizika Tekhnika Poluprov. 38, p. 566-569 (2004) (in Russian). https://doi.org/10.1134/1.1755889 | | 5. Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk, Mechanisms of forward current transport in pGaSe/n-InSe heterojunctions // Semiconductor Physics, Quantum Electronics & Optoelectronics 6, p. 458-460 (2003). | | 6. O. Lang, A. Klein, C. Pettenkofer, W. Jaegermann, and A. Chevy, Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles // J. Appl. Phys. 80, p. 3817-3821 (1996). https://doi.org/10.1063/1.363335 | | 7. W.H. Schlesinger, Semiconductors for room temperature nuclear detector applications // Semiconductors and semimetals 43, Lavoisier (1995). | | 8. Wide-band Layered Crystals and Their Physical Properties, A.B. Liskovich (Ed.). Lviv University, Lviv, 1982 (in Russian). | | 9. N.N. Berchenko, V.E. Krevs, V.G. Sredin, Semiconductor Solid Solutions and Their Applications. Voenizdat, Moscow, 1982 (in Russian). | | 10. M. Persin, B. Pivac, N. Urli, S. Popovich, F. Cavdarbasa, Some electrical properties of an n-InSe/pCdTe heterojunction // Fizika (SFRJ) 16, p. 279- 284 (1984). | | 11. Z.D. Kovalyuk, O.A. Politans'ka, Creation and investigation of p-n-junctions p-InSe〈Cd〉 using pulsed laser radiation // Fizika i Khimiya Tverdogo Tela 6, p. 146-148 (2005) (in Russian). | | 12. G.L. Belen'kij, Ye.Yu. Salaev, R.A. Sulejmanov, Deformation phenomena in the layered crystals // Uspekhi Fizicheskikh Nauk 155, p. 89-127 (1988) (in Russian). https://doi.org/10.3367/UFNr.0155.198805c.0089 | | 13. K.Z. Rushchanskiy, Influence of the hydrostatic pressure on static and dynamic properties of InSe crystals: first-principle studies // Fizika Tverdogo Tela 46, p. 177-184 (2004) (in Russian). https://doi.org/10.1134/1.1641949 | | 14. Zh. Pankov, Optical Processes in Semiconductors, Zh.I. Alferov and V.S. Vavilov (Eds.). Mir, Moscow, 1973 (in Russian). | | 15. H.J. Moller, Semiconductors for Solar Cells. Boston-London, Atrech House, 1993. | | 16. S.J. Fonash, Solar Cell Devices Physics. New York, Academic Press, 1981. | | 17. Ya.S. Mazurkevych, A.G. Voloshchuk, S.B. Kosenkov, G.G. Grushka, Method of chemical surface treatment of the tellurium-containing semiconductor materials, Patent № 1080680 (1983). | | 18. P.P. Horley, O.A. Chervinskiy, Software for investigations of current transport in semiconductor structures // Sensor Electronics and Microsystem Technologies 23 (4), p. 16-20 (2007). https://doi.org/10.18524/1815-7459.2007.4.114109 | | 19. E.I. Adirovich, P.M. Karageorgiy-Alkalaev, A.Yu. Leiderman, Double Injection Current in Semiconductors. Sovetskoe Radio, Moscow, 1978 (in Russian). | | 20. P.M. Karageorgiy-Alkalaev, A.Yu. Leiderman, Deep Impurity Levels in Wide-band Semiconductors. F.A.N., Tashkent, 1971 (in Russian). | | 21. A.V. Savitskiy, Manufacturing and Physical Properties of Cadmium Telluride. U.M.K. V.O., Kiev, 1990 (in Russian). | | 22. J.L. Pautrat, J.M. Francou, N. Magnea, E. Molva, K. Saminadayar, Donors and acceptors in tellurium compounds; the problem of doping and selfcompensation // J. Cryst. Growth 72, p. 194-204 (1985). https://doi.org/10.1016/0022-0248(85)90143-5 | | 23. G. Matare, Electronics of Defects in Semiconductors. Mir, Moscow, 1974 (in Russian). | | 24. A. Kelli, G. Grows, Crystallography and Defects in the Crystals. Mir, Moscow, 1974 (in Russian). | | 25. J. Hirt, I. Lote, Dislocation Theory. Atomizdat, Moscow, 1972 (in Russian). | | 26. V.T. Rid, Dislocations in the crystals. Metallurgizdat, Moscow, 1957(in Russian). | | 27. V.I. Fistul', Introduction to Semiconductor Physics. Vysshaya Shkola, Moscow, 1975 (in Russian). | | 28. B.L. Sharma, P.K. Purokhit, Semiconductor Heterojunctions. Mir, Moscow, 1979 (in Russian). | | 29. S.M. Sze. Physics of Semiconductor Devices. Energiya, Moscow, 1973 (in Russian). | | 30. J. Camassel, P. Merle, H. Mathieu, A. Chevy, Excitonic absorption edge of indium selenide // Phys. Rev. B. 17, p. 4718-4725 (1978). https://doi.org/10.1103/PhysRevB.17.4718 | | 31. E.S. Ortobolevskaya, E.A. Afanas'eva, L.K. Vodop'yanov, V.P. Sushkov, Cadmium Telluride, V.M. Wool (Ed.). Nauka, Moscow, 1968, p. 97-102 (in Russian). | | 32. J. Martinez-Pastor, A. Segura, J.L. Valdes, and A. Chevy, Electrical and photovoltaic properties of indium-tin-oxide/p-InSe/Au solar cells // J. Appl. Phys. 62, p. 1477-1483 (1987). https://doi.org/10.1063/1.339627 | | 33. S. Yamanaka, S. Tsushima, H. Shimizu and Y. Tokumary, Temperature dependence of photocurrent and band gap of Cl-doped semi-insulating CdTe with evaporated Au electrodes // Jpn J. Appl. Phys. 41, p. 5538-5541 (2002). https://doi.org/10.1143/JJAP.41.5538 | | 34. A. Waag, Y.S. Wu, R. Bicknell-Tassius, C. Gonser-Buntrock, and G. Landwehr, Investigation of molecular-beam epitaxially grown CdTe on GaAs by x-ray photoelectron spectroscopy // J. Appl. Phys. 68, p. 212-217 (1990). https://doi.org/10.1063/1.347118 | |
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