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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 2. P. 105-109.
Effect of acetone vapor treatment on photoluminescence
of porous nc-Si–SiOx nanostructures
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: indutnyy@isp.kiev.ua
Abstract. The effect of treatment in saturated acetone vapors on the spectral composition
and intensity of photoluminescence (PL) in porous oblique deposited SiO x films is
studied. As a result of this treatment followed by high-temperature annealing at the
temperature 930 °C, considerable PL intensity growth and the small blueshift of PL peak
position are observed in the porous, column-like structure films containing Si
nanocrystals. A more intense shortwave band (peak position – 540-560 nm) appears in
the PL spectrum of these structures, in addition to the longwave band (760-780 nm).
Both PL bands in treated samples are characterized by monomolecular radiative
recombination, which can be attributed to annihilation of excitons in silicon nanocrystals
embedded into oxide matrix (longwave band) and in carbon-enriched matrix near surface
of oxide nanocolumns (shortwave band). The possibility to control the PL characteristics
of the porous structures in a wide spectral range by above treatment is shown.
Keywords: nanocrystals, silicon oxide, photoluminescence, thin film.
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