Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 12 N 2

Effect of acetone vapor treatment on photoluminescence of porous nc-SiSiOx nanostructures
I.Z. Indutnyi, K.V.Michailovska, V.I. Min'ko, P.E.Shepeliavyi
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 105-109.
Abstract | Full text (PDF)

Influence of initial defects on defect formation process in ion doped silicon
V.A. Smyntyna, O.V. Sviridova
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 110-115.
Abstract | Full text (PDF)

Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations
A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 116-124.
Abstract | Full text (PDF)

Chemical treatment of monocrystalline cadmium telluride and Cd1-xMnxTe solid solutions by 22-Ͳ-citric acid etchant compositions
R.O. Denysyuk, V.M. Tomashik, Z.F. Tomashik, O.S. Chernyuk, V.I. Grytsiv
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 125-128.
Abstract | Full text (PDF)

The features of surface plasmon resonance in gold cluster films
L.S. Maksimenko, I.E. Matyash, S.P. Rudenko, B.K. Serdega
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 129-134.
Abstract | Full text (PDF)

Electrophysical properties of SmxPb1-xTe solid solutions
H.A. Hasanov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 135-137.
Abstract | Full text (PDF)

Glass formation region and X-ray analysis of the glassy alloys in AgGaSe2+GeS2<=>AgGaS2+GeSe2 system
V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 138-142.
Abstract | Full text (PDF)

Perspective of surface modification of CdTe single crystal substrate for creation photosensitive barrier structures
Makhniy V.P., Skrypnyk N.V., Boyko Yu.N.
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 143-146.
Abstract | Full text (PDF)

Properties of phase-shifting devices, intended for research of nonlinear absorption
M.R. Kulish, N.I. Malish
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 147-154.
Abstract | Full text (PDF)

Hydrogenic impurity in a two-layer spherical quantum dot
V.I. Boichuk, I.V. Bilynskyi, R.Ya. Leshko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 155-161.
Abstract | Full text (PDF)

Determination of refractive index dispersion and thickness of thin antireflection films TiO2 and Si3N4 on siliceous photoelectric transducers surface in transducer production process
V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 162-164.
Abstract | Full text (PDF)

Photoluminescent properties of Al2O3 films containing gold nanoparticles
E.B. Kaganovich, I.M. Kizjak, A.A. Kudryavtsev, E.G. Manoilov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 165-169.
Abstract | Full text (PDF)

Adaptive cross-correlation detector for signals optoelectronic reflective sensors
O.I. Bilyy, R.Y. Yaremyk, S.O. Kostyukevych, K.V. Kostyukevych
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 170-172.
Abstract | Full text (PDF)

Reliability of AC thick-film electroluminescent lamps
V. Vlaskin, S. Vlaskina, L. Berezhinsky, G. Svyechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 173-177.
Abstract | Full text (PDF)

Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
H. Bourdoucen and A. Zitouni
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 178-186.
Abstract | Full text (PDF)

Influence of two-photon absorption on polarization of light traveling in uniaxial crystals
M.R. Kulish, M.P. Lisitsa, N.I. Malysh
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 187-198.
Abstract | Full text (PDF)

Matrix model of inhomogeneous medium with circular birefringence in single scattering case
S.N. Savenkov, Ye.A. Oberemok, V.V. Yakubchak, .I. Barchuk
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.2. P. 199-203.
Abstract | Full text (PDF)