Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (2) P. 110-115 (2009).
DOI:
https://doi.org/10.15407/spqeo12.02.110
References
1. S.S. Kapur, M. Prasad, J.C. Crocker, T. Sinno, Role of configurational entropy in the thermodynamics of clusters of point defects in crystalline solids // Phys. Rev. B 72, 014119 (2005). https://doi.org/10.1103/PhysRevB.72.014119 | | 2. G. Davies, Sh. Hayama, L. Murin, R. KrauseRehberg, V. Bondarenko, A. Sengupta, C. Davia, A. Karpenko, Radiation damage in silicon exposed to high-energy protons // Phys. Rev. B 73, 165202 (2006). https://doi.org/10.1103/PhysRevB.73.165202 | | 3. H. Bracht, Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations // Phys. Rev. B 75, 035210 (2007). https://doi.org/10.1103/PhysRevB.75.035210 | | 4. H. Bracht, H.H. Silvestri, I.D. Sharp, E.E. Haller, Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon // Phys. Rev. B 75, 035211 (2007). https://doi.org/10.1103/PhysRevB.75.035211 | | 5. N.E.B. Cowern, Diffusion in a single crystal within a stressed environment // Phys. Rev. Lett. 99, 155903 (2007). https://doi.org/10.1103/PhysRevLett.99.155903 | | 6. F.F. Komarov, O.I. Velichko, V.A. Dobrushkin, A.M. Mironov, Mechanisms of arsenic clustering in silicon // Phys. Rev. B 74, 035205 (2006). https://doi.org/10.1103/PhysRevB.74.035205 | | 7. K. Reivy, Defects and Impurities in Semiconductor Silicon. Mir, Мoscow, 1984 (in Russian). | | 8. C.L. Allerd, X. Yuan, M.Z. Bazant, L.W. Hobbs, Elastic constants of defected and amorphous silicon with the environment-dependent interatomic potential // Phys. Rev. B 70 134113 (2004). https://doi.org/10.1103/PhysRevB.70.134113 | | 9. B.V. Petukhov, The effect of dynamic ageing of dislocations on deformation behaviour of semiconductors with impurities // Fizika Tekhnika Poluprovnikov 36 (2), p. 129-133 (2002) (in Russian). https://doi.org/10.1134/1.1453422 | | 10. E. Sirtle, A. Adler, Chromsaure-Flussaure als specifisches System zur Atzgrubenentwicklung auf Silizium // Z. Metallik 52 (8), S. 529-531 (1961). | | 11. J. Philibert, G. Fontaine, E. Vicario et al., Microanalysis and Scanning Electron Microscopy. Metallurgiya, Moscow, 1985 (in Russian). | | 12. L.N. Aleksandrov, Transitional Regions of Epitaxial Films in Semiconductors. Nauka, Novosibirsk, 1978 (in Russian). https://doi.org/10.1016/0040-6090(78)90087-1 | | 13. F. Hubbard Horn, Densitometric and electrical investigation of boron in silicon // Phys. Rev. 97 (6), p. 1521-1525 (1955). https://doi.org/10.1103/PhysRev.97.1521 | | 14. Yu.A. Kontsevoi, Yu.M. Litvinov, E.А. Fattakhov, Plasticity and Strength of Semiconductor Materials and Structures. Radio i svyaz', Moscow, 1982 (in Russian). | | 15. V.М. Babich, А.I. Bletskan, Е.F. Venger, Oxygen in Monocrystals of Silicon. Interpress LTD, Kiev, 1997 (in Russian). | | 16. V.I. Plebanovich, A.I. Belous, A.R. Chelyadinskii, V.B. Odzhaev, Creation of dislocation-free iondoped silicon layers // Fizika Tverdogo Tela 50 (8), p. 1378-1382 (2008) (in Russian). https://doi.org/10.1134/S1063783408080088 | | 17. I.N. Smirnov, Changes of silicon lattice parameter caused by boron, arsenic and antimony diffusion // Doklady Akademii nauk SSSR. Tehnicheskaya fizika 221 (2), p. 332-334 (1975) (in Russian). | | 18. I.N. Smirnov, I.I. Petrov, T.F. Goryacheva, Research of boron diffusion in silicon by X-ray diffraction methods // Elektronnaya tehnika. Seriya 2 (Poluprovodnikovye pribory) 97 (5), p. 11- 18 (1975) (in Russian). | | 19. I.N. Smirnov, Deformation of silicon lattice caused by bombardment with boron and oxygen ions // Doklady Akademii nauk SSSR. Fizicheskaya khimiya 225 (3), p. 621-623 (1975) (in Russian). | |
|
|