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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 2. P. 110-115.
Influence of initial defects on defect formation process
in ion doped silicon
I.I. Mechnikov Odessa National University, Physics Department
42, Paster str., Odessa 65023, Ukraine
E-mail: sviridova_olya@mail.ru
Abstract. We study the influence of initial defects in high-resistance epitaxial silicon
layers of high-resistance epitaxial silicon structures on defect formation processes at ion
boron doping. The method of reverse voltage-capacitance characteristics revealed two
maxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studing
the structure of the near-surface area in ion-doped epitaxial silicon by means of modern
methods has shown that in the field of the first concentration maximum (the nearest one
to a wafer surface), the fine-blocked silicon structure is localised. In the range of the
second doping concentration maximum, the grid of dislocations with the variable period
within one grid and consisting of 60° dislocations is found out. In the area of dislocation
grids, oxygen atoms have been found out. The variable period in the grid is related with a
change of mechanical stress and deformation distribution law in the plane of dopant
diffusion front as dependent on the presence of initial defects in silicon.
Keywords: ion doping, relative deformation, dislocations.
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