Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 2. P. 138-142.
https://doi.org/10.15407/spqeo12.02.138

Glass formation region and X-ray analysis of the glassy alloys in AgGaSe2+GeS2 <=> AgGaS2+GeSe2 system
V.V. Halyan1*, M.V. Shevchuk2, G.Ye. Davydyuk1, S.V. Voronyuk1, A.H. Kevshyn1, V.V. Bulatetsky1

1Volyn National University, Department of Solid State Physics, 13, Voli Ave., 43025 Lutsk, Ukraine
2Lutsk National Technical University, Department of Chemistry, 75, Lvivska str., 43018 Lutsk, Ukraine
*Corresponding author phone/fax: +38(0332)-249221, e-mail: halyan@univer.lutsk.ua

Abstract. A region of glass formation was found during melt quenching from 1273 K in the AgGaSe 2 +GeS 2 AgGaS 2 +GeSe 2 system. It is localized along the binary GeSe 2 - GeS 2 system. Characteristic parameters (T g , T c , T m ) were determined for the glassy alloys, and T gr and KG were calculated using them. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic distances within the first and second coordination spheres were determined.

Keywords: glassy alloy; radial distribution function; average interatomic distances; coordination sphere.

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