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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 2. P. 165-169.
Photoluminescent properties of Al2O3 films containing gold
nanoparticles, which are prepared by pulse laser deposition
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
E -mail: dept_5@isp.kiev.ua
Abstract. Photoluminescent porous films of aluminum oxide containing gold
nanoparticles were prepared using pulse laser deposition from backward flow of particles
from erosion torch. Measurements of time-resolved photoluminescence spectra revealed
high intense photoluminescent band with the peak close to 2.4 eV and its low-energy
shoulder at 1.6 - 1.7 eV, high-energy shoulder at 2.9 eV, with relaxation times up to
several microseconds. Studied were the influence of formation conditions and gold
concentrations in the target on photoluminescent properties of films. The nature of
photoluminescence related with radiative recombination of electrons and holes in Au
nanoparticles as well as local centers in Al 2 O 3 matrix is discussed.
Keywords: aluminum oxide film, gold nanoparticles, time-resolved photoluminescence.
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