Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 2. P. 209-213.
https://doi.org/10.15407/spqeo13.02.209

Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
І.М. Fodchuk1, V.V. Dovganyuk1, Т.V. Litvinchuk1, V.P. Kladko2, М.V. Slobodian2, O.Yo. Gudymenko2, Z. Swiatek3

1Yu. Fed’kovych Chernivtsi National University, Chernivtsi, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
3Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Krakow, Poland

Abstract. Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged near- surface layer was used for explanation.

Keywords: irradiation, high-energy electrons, Cz-Si, oxygen-containing defects, X-ray diffraction.

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