Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (2) P. 209-213 (2010).
DOI: https://doi.org/10.15407/spqeo13.02.209

References

1. М.А. Krivoglaz, Diffuse Scattering of X-rays and Neutrons on Fluctuation Inhomogeneities in Nonperfect Crystals. Naukova Dumka, Kiev, 1984 (in Russian).
2. A. Authier, Dynamical Theory of X-ray Diffraction. Oxford University Press, N.Y., 2001.
3. V.B. Molodkin, A.I. Nizkova, A.P. Shpak et al., Diffractometry of Nanodimensional Defects and Crystal Heterolayers. Akademperiodika, Kiev, 2005 (in Russian).
4. V.B. Molodkin, V.P. Kladko, S.I. Olikhovs'kii, E.M. Kislovskiy, T.P. Vladimirova, E.V. Kochelab, R.F. Seredenko, O.V. Reshetnyk, Diffraction characterization of microdefect structure of silicon crystals after isochronal annealing // Metallofizika i Noveishiye Tekhnologii, 31, p. 1205-1222 (2009), in Russian.
5. V.B. Molodkin, S.I. Olikhovskii, E.N. Kislovskii, T.P. Vladimirova, E.S. Skakunova, R.F. Seredenko, B. V. Sheludchenko. Dynamical theoretical model of the high-resolution double-crystal X-ray diffractometry of imperfect single crystals with microdefects // Phys. Rev. B, 78(22), 224109- 224121 (2008).
https://doi.org/10.1103/PhysRevB.78.224109
6. V.B. Molodkin, S.I. Olikhovskii, E.G. Len, E.N. Kislovskii, V.P. Kladko, O.V. Reshetnyk, T.P. Vladimirova, B.V. Sheludchenko, Sensitivity of triple-crystal X-ray diffractometers to microdefects in silicon // Phys. status solidi (a) 206 (8), p. 1761-1765 (2009).
https://doi.org/10.1002/pssa.200881588
7. U. Pietsch, V. Holý and T. Baumbach, in: High Resolution X-ray Scattering from Thin Films and Multilayers, edited by G. Hoehler // Springer Tracts in Modern Physics, vol. 149. SpringerVerlag, Berlin, 1999.
8. V.T. Bublik, S.Yu. Matsnev, and V.Ya. Reznik // Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free largediameter silicon wafers // Fizika Tverdogo Tela, 45, p. 1825-1832 (2003), in Russian.
https://doi.org/10.1134/1.1620095
9. V.V. Dovganyuk, І.М. Fodchuk, О.G. Gimchinsky, А.V. Oleinych-Lysyuk, А.І. Nizkova, Determination of dominant type of defects in Cz-Si single crystals after irradiation with high-energy electrons by a change in X-ray reflectivity // Semiconductor Physics, Quantum Electronics and Optoelectronics, 9(2), p. 95-103 (2006).
https://doi.org/10.15407/spqeo9.02.095
10. V.V. Dovganyuk, T.V. Litvinchuk, V.V. Slobodjan, I.M. Fodchuk, Defect structure changes in the single Si-crystals after irradiation by highenergy electrons and long natural aging by highresolution three-crystal X-ray diffractometry // Proc. SPIE, 7008, p. 1B1-1B7 (2008).
https://doi.org/10.1117/12.797224
11. P. Klang and V. Holý, X-ray diffuse scattering from stacking faults in Czochralski silicon // Semicond. Sci. Technol., 21, p. 352-357 (2006).
https://doi.org/10.1088/0268-1242/21/3/025
12. L. Capello, T.H. Metzger, V. Holý, M. Servidori & A. Malachias, Structural properties of ultra-lowenergy ion-implanted silicon studied by combined X-ray scattering methods // J. Appl. Cryst. 39, p. 571-581 (2006).
https://doi.org/10.1107/S0021889806018917
13. V. Holý, Dynamical X-ray diffraction from crystals with precipitates. I. Theory of the Bragg case // Acta cryst. A 40, p. 675-679 (1984).
https://doi.org/10.1107/S0108767384001380
14. K. Reivi, Defects and Impurities in Semiconductor Silicon. Mir, Мoscow, 1984 (in Russian).
15. J.R. Patel, Computer-simulation methods in X-ray topography // Acta cryst. A, 35, p. 21-28 (1979).
https://doi.org/10.1107/S056773947900005X
16. K.F. Kelton, R. Falster, D. Gambaro, M. Olma, M. Cornara and P.F. Wei // J. Appl. Phys., 85, p. 8097-8111 (1999).
https://doi.org/10.1063/1.370648
17. W. Patrick, E. Hearn, W. Westdorp, A. Bohg, Oxygen precipitation in silicon // J. Appl. Phys. 50, p. 7156-7164 (1979).
https://doi.org/10.1063/1.325825
18. H. Bender, Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques // Phys. status solidi (a), 86, p. 245-261 (1984).
https://doi.org/10.1002/pssa.2210860126
19. W. Bergholz, M.J. Binns, G.R. Booker, J.C. Hutchinson, S.H. Kinder, S. Messoloras, A study of oxygen precipitation in silicon using highresolution transmission electron microscopy, smallangle neutron scattering and infrared absorption // Phil. Mag. B, 59, p. 499-522 (1989).
https://doi.org/10.1080/13642818908211173
20. A.J.R. de Kock, Crystal growth of bulk crystals: Purification, doping and defects, in: Handbook on Semiconductor (vol. 3: Materials, Properties and preparation). North-Holand and Publishing Company, 1980, p. 247-333.
21. A.J.R. de Kock, P.J. Roksnoer, P.G.T. Boonen, The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensation // J. Cryst. Growth, 30(3), p. 279-294 (1975).
https://doi.org/10.1016/0022-0248(75)90001-9
22. S. Iida, Y. Aoki, Y. Sugita, T. Abe, H. Kawata, Grown-in microdefects in a slowly grown Czochralski silicon crystal observed by synchrotron radiation topography // Jpn. J. Appl. Phys., 39, p. 6130-6135 (2000).
https://doi.org/10.1143/JJAP.39.6130