Abstract. In this paper, we report the effect of Sb additive on dielectric properties of two binary glassy systems, comparing the properties of a-Se In Se − 90 In 10 , a-Se 75 In 25 and a- Se 75 In 10 Sb 15 glassy alloys. The temperature and frequency dependence of ε and ′ ε ′′ in glassy Se 90 In 10 , Se 75 In 25 , and Se 75 In 10 Sb 15 alloys are studied by measuring the capacitance and dissipation factor within the frequency 1 kHz–5 MHz and temperature 300–350 K ranges. Debye like relaxation of dielectric behavior has been observed, which is in agreement with the Guintini theory of dielectric dispersion based on two electron hopping over a potential barrier and is applicable in the present case. , ε′ ε ′′ and loss tangent (Tan δ) are found highly frequency and temperature dependent. Dependence of these dielectric parameters on the Sb metallic impurity has also been found in the present glassy system. The peculiar role of the third element Sb, as an impurity in the pure binary Se 90 In 10 and Se 75 In 25 glassy alloys, is also discussed in terms of electronegativity difference and covalent character between the elements used in making the aforesaid glassy system..

Keywords: chalcogenide glasses, dielectric measurement, defect state.

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