Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)
Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo




Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 14 N 2
DOI: https://doi.org/10.15407/spqeo14.02

Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
P.R. Tripathy, Moumita Mukherjee and S.P. Pati
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 137-144.
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Optimal solution in producing 32nm CMOS technology transistor with desired leakage current
H.A.Elgomati, I.Ahmad, F.Salehuddin, F.A.Hamid, A.Zaharim, B.Y.Majlis, P.R.Apte
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 145-151.
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Role of Sb additive in the dielectric properties of Se90In10 and Se75In25 glassy alloys
J. Sharma, S. Kumar
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 152-156.
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Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates
M.M. Ivashchenko, A.S. Opanasyuk, N.M. Opanasyuk, S.M. Danilchenko, V.V. Starikov
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 157-163.
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The electric field gradient asymmetry parameter in InSe
Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 164-166.
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Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation
R. Burbelo, M. Isaiev, A. Kuzmich
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 167-169.
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Charge transport in bismuth orthogermanate crystals
T.M. Bochkova, S.N. Plyaka
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 170-174.
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Influence of polarization of free-electron system in semiconductor on the position of minimum in plasma light reflection
V.S. Severin
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 175-178.
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In fluence of Ca2+ ions on the habit of KDP crystals
S. Javidi, R. Enayati, M. Iraj, N. Aliakbari
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 179-182.
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Influence of electron-electron drag on piezoresistance of n-Si
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 183-187.
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Singular analysis of Jones-matrix images describing polycrystalline networks of biological crystals in diagnostics of cholelithiasis in its latent period
V.O. Balanetska, Yu. Marchuk, A.V. Karachevtsev, V.O. Ushenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 188-194.
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Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules
M.M. Dvoynenko, Z.I. Kazantseva, V.V. Strelchuk, O.F. Kolomys, E.G. Bortshagovsky, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 195-199.
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Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO3-HCl solutions
I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 200-202.
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Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs
Ashwani K. Rana, Narottam Chand, Vinod Kapoor
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 203-208.
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Effect of microwave radiation on optical characteristics of thin gold films
P.M. Boltovets
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 209-212.
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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 213-221.
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Information processing in an optoelectronic display system
A.V. Bushma
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 222-227.
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Wavelet analysis of Jones-matrix images corresponding to polycrystalline networks of biological crystals in diagnostics of tuberculosis
N.I. Zabolotna, V.O. Balanetska, O.Yu. Telenga, V.O. Ushenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 228-236.
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Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs4Sb12)
J. O. Akinlami, A.M Awobode
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 237-240.
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Electrical properties of MIS structures with silicon nanoclusters
S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 241-246.
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Structural properties of nanocomposite SiO2(Si) films obtained by ion-plasma sputtering and thermal annealing
O.L. Bratus', A.A. Evtukh, O.S. Lytvyn, M.V. Voitovych, V.. Yukhymchuk
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 247-255.
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Dielectric and electro-optical properties of solutions of chemically modified fullerene 60 in nematic liquid crystal
V.E. Vovk, O.V. Kovalchuk, M.P. Gorishnyj, T.M. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.2. P. 256-260.
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