Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 2. P. 237-240.
Photoemission study of the electronic structure of praseodymium
filled skutterudite (PrOs4Sb12)
1University of Agriculture, Department of Physics, P.M.B 2240, Abeokuta, Ogun State, Nigeria
Abstract.
Here we report the electronic structure of praseodymium filled skutterudite
compound PrOs 4 Sb 12 . The theoretical photoemission spectrum (PES) at ћω = 21.2 eV
shows four distinct structures peaking at about –0.2, –7.7, –13.7 and –18.2 eV. But on
increasing the photon energy to 40.8 eV, the peak at –0.2 eV becomes a prominent or
pronounced peak, the peak at –7.7 eV decreases in intensity, the peak at –13.7 eV
increases intensity, the peak at –18.2 eV reduces in intensity and another peak emerges.
These structures are interpreted to be associated with the density-of-states features on the
basis of the results of band structure calculation. Hence, the peak at –0.2 eV arises from
the symmetry point P at –11.61 eV, the peak at –7.7 eV comes from the symmetry point P
at –11.62 eV, the peak at –13.7 eV arises from the symmetry point P at –11.88 eV and the
peak at –18.2 eV arises from the symmetry point P at –11.88 eV. The PES energy level
difference for PrOs 4 Sb 12 fell within the range –0.5 to –7.5 eV indicating that it can be
used in designing electronic devices. The energies of specific electronic states in the band
structure of PrOs 4 Sb 12 showed that it could be used for the development of solid-state
devices.
Keywords: photoemission spectroscopy, electronic structure, energy level difference,
superconductor.
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