Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 2. P. 237-240.
DOI: https://doi.org/10.15407/spqeo14.02.237


Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs4Sb12)
J.O. Akinlami1,* A.M. Awobode

1University of Agriculture, Department of Physics, P.M.B 2240, Abeokuta, Ogun State, Nigeria
2University of Ibadan, Department of Physics, Ibadan, Nigeria *Corresponding author: E-mail: johnsonak2000@yahoo.co.uk

Abstract. Here we report the electronic structure of praseodymium filled skutterudite compound PrOs 4 Sb 12 . The theoretical photoemission spectrum (PES) at ћω = 21.2 eV shows four distinct structures peaking at about –0.2, –7.7, –13.7 and –18.2 eV. But on increasing the photon energy to 40.8 eV, the peak at –0.2 eV becomes a prominent or pronounced peak, the peak at –7.7 eV decreases in intensity, the peak at –13.7 eV increases intensity, the peak at –18.2 eV reduces in intensity and another peak emerges. These structures are interpreted to be associated with the density-of-states features on the basis of the results of band structure calculation. Hence, the peak at –0.2 eV arises from the symmetry point P at –11.61 eV, the peak at –7.7 eV comes from the symmetry point P at –11.62 eV, the peak at –13.7 eV arises from the symmetry point P at –11.88 eV and the peak at –18.2 eV arises from the symmetry point P at –11.88 eV. The PES energy level difference for PrOs 4 Sb 12 fell within the range –0.5 to –7.5 eV indicating that it can be used in designing electronic devices. The energies of specific electronic states in the band structure of PrOs 4 Sb 12 showed that it could be used for the development of solid-state devices.

Keywords: photoemission spectroscopy, electronic structure, energy level difference, superconductor.

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