Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 2. P. 241-246.
DOI: https://doi.org/10.15407/spqeo14.02.241

Electrical properties of MIS structures with silicon nanoclusters
S.V. Bunak1, V.V. Ilchenko1, V.P. Melnik2, I.M. Hatsevych2, B.N. Romanyuk1, A.G. Shkavro1, O.V. Tretyak1

1Taras Shevchenko Kyiv National University, Institute of High Technologies 64, Volodymyrska str., 01601 Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine E-mail: ilch@univ.kiev.ua

Abstract. The theoretical and experimental investigations of electrical properties of the Al-SiO 2 - -SiO ( ncs Si − 2 -Si structures grown using high temperature annealing SiO x , x < 2, have been carried out. It has been experimentally found that the Al-SiO 2 - ( ) ncs Si − -SiO 2 -Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between and SiO ncs Si − 2 were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.

Keywords: nanocluster, static conductance, dynamic conductance, hopping transport, thermally stimulated current, memory effect.

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