Abstract. The nanocomposite SiO 2 (Si) films containing Si nanoclusters inside insulating SiO 2 matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O 2 containing gas mixture and following thermal annealing have been used to form nanocomposite SiO 2 (Si) films. The structural properties of the obtained films have been studied using several methods. Among them, there were ellipsometry, IR spectroscopy, Raman spectroscopy, and AFM. Transition of SiO x matrix into insulating SiO 2 matrix has been revealed by IR spectroscopy. The shift of the transmittance spectra toward high frequency region and the increase in their intensity have been observed. The existence of amorphous and nanocrystalline phases into SiO 2 (Si) films have been confirmed using Raman spectroscopy. Two material phases on the film surface, namely SiO 2 and Si, and surface density of silicon nanoclusters have been determined using AFM. It was shown that the size of silicon nanoclusters and their surface density depend on the level of enrichment with silicon of the initial SiO x film after ion-plasma sputtering and the temperature of subsequent annealing.

Keywords: silicon nanoclusters, nanocomposite films, ion-plasma sputtering, ellipsometry, IR spectroscopy, Raman spectroscopy, AFM.

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