Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 2. P. 124-128.
DOI: https://doi.org/10.15407/spqeo15.02.124

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
V.M. Sorokin1, R.V. Konakova1, Ya.Ya. Kudryk1, A.V. Zinovchuk2, R.I. Bigun3, R.Ya. Kudryk3, V.V. Shynkarenko1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, Kyiv 03028, Ukraine
Tel.: (380-44) 525-57-85; e-mail: vsorokin@isp.kiev.ua
2I. Franko Zhytomyr State University
3I. Franko Lvivs National University

Abstract. We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated.

Keywords: light-emitting diode (LED), gallium nitride, heat sink, thermal resistance.

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