Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 15 N 2
DOI: https://doi.org/10.15407/spqeo15.02

Efficiency a-Si:H solar cell. Detailed theory
Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 091-116.
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Synthesis route and optical characterization of CdS:Mn/polyvinyl alcohol nanocomposite
V.I. Fediv, G.Yu. Rudko, A.I. Savchuk, E.G. Gule, A.G. Voloshchuk
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 117-123.
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Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 124-128.
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Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 129-138.
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Current transport mechanisms in metal – high-k dielectric – silicon structures
Y.V. Gomeniuk
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 139-146.
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Optical absorption edge in (Ag3AsS3)x(As2S3)1-x superionic glasses
I.P. Studenyak, M. Kranjcec, Yu.Yu. Neimet, M.M. Pop
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 147-151.
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Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals
A.P. Paiuk, A.V. Stronski, N.V. Vuichyk, A.A. Gubanova, Ts.A. Krys’kov, P.F. Oleksenko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 152-155.
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Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range
O.M. Makhanets, N.R. Tsiupak, O.M. Voitsekhivska
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 156-161.
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Application of ferroelectrics to create electroluminescent indicators of temperature
V.G. Boyko, N.S. Zayats
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 162-165.
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Effect of pressure on the properties of Al-SiO2-n-Si<Ni> structures
S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 166-169.
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Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
A. B. Smirnov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 170-175.
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Graded-gap AlInN Gunn diodes
I.P. Storozhenko1, A.N. Yaroshenko2, M.V. Kaydash1
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 176-180.
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