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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 15 N 2
DOI: https://doi.org/10.15407/spqeo15.02

Efficiency a-Si:H solar cell. Detailed theory
Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 091-116.
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Synthesis route and optical characterization of CdS:Mn/polyvinyl alcohol nanocomposite
V.I. Fediv, G.Yu. Rudko, A.I. Savchuk, E.G. Gule, A.G. Voloshchuk
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 117-123.
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Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 124-128.
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Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 129-138.
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Current transport mechanisms in metal – high-k dielectric – silicon structures
Y.V. Gomeniuk
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 139-146.
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Optical absorption edge in (Ag3AsS3)x(As2S3)1-x superionic glasses
I.P. Studenyak, M. Kranjcec, Yu.Yu. Neimet, M.M. Pop
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 147-151.
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Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals
A.P. Paiuk, A.V. Stronski, N.V. Vuichyk, A.A. Gubanova, Ts.A. Krys’kov, P.F. Oleksenko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 152-155.
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Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range
O.M. Makhanets, N.R. Tsiupak, O.M. Voitsekhivska
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 156-161.
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Application of ferroelectrics to create electroluminescent indicators of temperature
V.G. Boyko, N.S. Zayats
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 162-165.
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Effect of pressure on the properties of Al-SiO2-n-Si<Ni> structures
S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 166-169.
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Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
A. B. Smirnov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 170-175.
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Graded-gap AlInN Gunn diodes
I.P. Storozhenko1, A.N. Yaroshenko2, M.V. Kaydash1
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.2. P. 176-180.
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